JePPIX MPW Platforms
JePPIX offers platforms created from InP integrated photonics and the TriPleX platfrom, although not Silicon photonics. Each has there own distinctive advantage and a comparison table is offered below.
Select the technology that suits your needs best. If you have an idea on what building blocks are required for your circuit, use the comparison table below to help you in your selection. JePPIX members receive independent advice to help in making the right selection. Contact us to discuss the possibilities and help you make your selection.
|Electro - absortion modulators||•••||••|
If additional expert advice is required to compare different foundry processes and their adequacy to the target application, this can be provided by professional design houses.
The TriPleX platform offers low-loss straight waveguides, bends, S-bends, offsets, splitters, spot size converters, lateral tapers and thermo-optic phase shifters.
For example, combinations of these building blocks allow the creation of microwave photonics ASPICs by combining Mach-Zehnders and micro ring resonators. The current platform has guaranteed losses below 0.5 dB/cm. Further technical information on Triplex MPW’s is posted on the new Lionix International website.
JePPIX offers a low cost access to the production of InP based chips.
InP offers amplification and laser sources which are monolithically integrated on chip. No need for complex assembly steps. Additionally InP offers efficient modulators and detectors as well as a broad range of passive waveguide structures and devices. The latest capability overview is shown below:
|Category||Component||Specification||Fraunhofer HHI||SMART Photonics|
|Lasers and Amplifiers||SOA||Gain||92 cm-1@7000A/cm2||70 cm-1 @ 7000 A/cm2|
|DBR grating||Tuning range||4 nm||1 nm (uniform, not optimized)|
|DFB laser||Tuning range||4 nm||On request|
|Output power||10 mW @ 150 mA||10 mW @ 100 mA on request|
|Small signal Bandwidth||20 GHz @ 100 mA|
|DBR laser||Tuning range||4 nm||On request|
|Output power||20 mW @ 150 mA||10 mW @ 100 mA|
|Broad band reflectors||1x2 MMI reflector||Loss||*||2 dB|
|1x1 MMI reflector||Loss||*||2 dB|
|Polarization devices||Polarization splitter||Loss||2 dB||*|
|Polarization converter||Loss||1 dB||*|
|PIN photodiode||PIN photodiode||3 dB bandwidth||45 GHz||18 GHz (RF pin diode) / >25 GHz on request|
|Dark current||2 nA @ -2 dV||< 25 nA @ -2 V Bias (DC pin diode)|
|Sensitivity||0.8 A/W||0.85 A/W|
|Modulators||Thermo-optic phase modulator||Loss||2 dB/cm||*|
|I(PI) x L||20 mA x mm|
|Current injection phase modulator||Loss||2dB for 100-200 um||<0.5 dB for 2mm|
|I(PI) x L||20 mA x mm||t.b.d.|
|Electro-Optical phase modulator||Loss||Coming with HHI19! Expected loss 4 dB||<0.5 dB for 2mm|
|Bandwidth||Expected value 30 GHz||15 GHz|
|U(PI) x L||Expected 4 V||Vpi = 5 V|
|Electro-Absorption modulator||EO Bandwidth||20 GHz|
|ER / length||10 dB / 100 µm|
|Spot size converter||Spot size converter for edge coupling||Available. Loss waveguide to SSMF is 1.5 dB||Lateral taper|
|Passive waveguides||Straight Waveguide||Loss||<2 dB/cm||12 dB/cm|
|Arc waveguide||Minimal radius||150 um;||100 um|
|Tapered waveguide||Loss||2 dB/cm||2 dB/cm|
|Couplers||1x2 MMI coupler||Loss||0.5 dB||0.5 dB (typical) max 1 dB|
|1x2 MMI coupler||Loss||0.5 dB||0.5 dB (typical) max 1 dB|
|Directional coupler||Loss||0.5 dB|