Insights in PIC technology
Register for our JePPIX newsletter and be the first to know about new PIC technology within the JePPIX platform!
Photonic integration in a micrometer-thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high-performance optoelectronic functions together with high-index-contrast nanophotonic circuitries.
An overview of recent developments regarding technology and devices, including include low propagation losses, plasmonic waveguides, a variety of laser structures, and improved wavelength demultiplexers.
A perspective showing the high potential for breaking speed, energy and density bottlenecks in conventional photonic integration technologies.
The antibunching properties of multiple single photons located are confirmed at distinct optical modes in a quantum frequency comb.
The first successful integration of integrating non-volatile phase change material (PCM) on InP photonic circuits.
Experimental study of the performance of directional couplers fabricated in indium-phosphide membrane on silicon (IMOS) technology.
Quantum interference measurements using photon pairs generated via cavity enhanced spontaneous four-wave mixing.
The experimental performance of a compact beamformer fabricated on the novel InP membrane on silicon platform exhibiting large steering angle (±90˚ at 26 GHz), high throughput (12 Gbps), and fast reconfiguration time (~250 ns).
This special issue includes 19 papers on InP integrated photonics capturing some of the most important recent advances, and providing a reference point for current state of the art.
Meint Smit, Xaveer Leijtens, Huub Ambrosius, Erwin Bente, Jos van der Tol, Barry Smalbrugge1, Tjibbe de Vries1, Erik-Jan Geluk, Jeroen Bolk, Rene van Veldhoven, Luc Augustin1, Peter Thijs…